A UNIFIED MODEL OF SELF-OSCILLATING CURRENT SYSTEMS IN COMPENSATED SILICON AND THE INFLUENCE OF TEMPERATURE AND CONTACT EFFECTS
Authors
N.F. Zikrillaev, N.U. Abdullaeva ()Files
Abstract
This paper investigates current self-oscillations in injection structures based on silicon (Si) compensated with Mn, Se, and Zn impurities possessing deep energy levels. A unified physical and mathematical model common to these three different types of impurities is proposed. The influence of potential barriers at the contact interface and temperature on the amplitude and frequency of oscillations is analyzed. The agreement between experimental results and theoretical calculations is explained in terms of the injection–recombination mechanism.
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